Journal
NANO LETTERS
Volume 8, Issue 11, Pages 4007-4013Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl802668s
Keywords
-
Categories
Funding
- Natural Sciences and Engineering Research Council of Canada
- E. W. R. Steacie Memorial Fellowship
Ask authors/readers for more resources
The electron spin flip relaxation dynamics in type II CdSe/CdTe nanorod heterostructures are investigated by an ultrafast polarization transient grating technique. Photoexcited charge separation in the heterostructures suppresses the electron-hole exchange interaction and their recombination, which reduces the electron spin relaxation rate in CdSe nanocrystals by 1 order of magnitude compared to exciton relaxation. The electron orientation is preserved during charge transfer from CdTe to CdSe, and its relaxation time constant is found to be similar to 5 ps at 293 K in the CdSe part of these nanorods, This finding suggests that hole spin relaxation determines the exciton fine structure relaxation rate and therefore control of exciton spin relaxation in semiconductor nanostructures is possible by delocalizing or translating the hole density relative to the electron.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available