Journal
NANO LETTERS
Volume 8, Issue 7, Pages 1813-1818Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl080240t
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- Ministry of Education, Science & Technology (MoST), Republic of Korea [K08008] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과06A1102, R16-2000-001-01001-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the first unambiguous ferroelectric properties of ultra-thin-walled Pb(Zr,Ti)O-3 (PZT) nanotube arrays, each with 5 nm thick walls and outer diameters of 50 nm. Ferroelectric switching behavior with well-saturated hysteresis loops is observed in these ferroelectric PZT nanotubes with P-r and E-c values of about 1.5 mu C cm(-2) and 86 kV cm(-1), respectively, for a maximum applied electric field of 400 kV cm(-1). These PZT nanotube arrays (10(12) nanotubes cm(-2)) might provide a competitive approach toward the development of three-dimensional capacitors for the terabyte ferroelectric random access memory.
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