Journal
NANO
Volume 7, Issue 5, Pages -Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S1793292012500373
Keywords
Silicene nanoribbon; germanene nanoribbon; half-metallicity; spin-filter; spin field; effect transistor; first-principles calculation
Funding
- NSFC [10774003]
- National 973 Projects, MOST of China [2007CB936200]
- Fundamental Research Funds for the Central Universities, National Foundation for Fostering Talents of Basic Science [J0630311]
- Program for New Century Excellent Talents in University of MOE of China
Ask authors/readers for more resources
By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter effciency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
