Doping and interface of homoepitaxial diamond for electronic applications

Diamond has been attracting the attention of many researchers because of its potential for new applications such as in quantum devices and power electronics. These applications are enabled by the progress made in improving the quality of undoped, boron-doped, and phosphorus-doped diamond films grown by chemical vapor deposition techniques. Recent progress in diamond film growth and heterostructures of diamond and other compound semiconductors to realize these electronics applications are reported.