4.6 Article

Toward high-mobility organic field-effect transistors: Control of molecular packing and large-area fabrication of single-crystal-based devices

Journal

MRS BULLETIN
Volume 38, Issue 1, Pages 34-42

Publisher

CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2012.309

Keywords

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Funding

  1. National Science Foundation (NSF) Division of Materials Research (DMR) Solid-State Chemistry [DMR-0705687-002]
  2. Air Force Office of Scientific Research (AFOSR) [FA9550-12-1-01906]
  3. Stanford Global Energy and Climate Program
  4. National Natural Science Foundation of China [51222302]
  5. Fundamental Research Funds for the Central Universities [2012 QNA 4025]
  6. Department of Energy, Laboratory Directed Research and Development [DE-AC02-76SF00515]

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High-mobility organic field-effect transistors (OFETs) are the basic units for a variety of high-performance electronic applications. Here, we review recent progress in controlling molecular packing and crystal growth in high-mobility, small molecular organic FETs. Strategies to tune molecular packing of organic semiconductors and their impact on charge transport are described. Methods for the controlled growth of single-crystal organic semiconductors required for large-area device construction are reviewed. Furthermore, the advantages, limitations, and potential of these methods are also discussed.

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