4.6 Article

Organic resistive nonvolatile memory materials

Journal

MRS BULLETIN
Volume 37, Issue 2, Pages 144-149

Publisher

CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2012.4

Keywords

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Funding

  1. Korean National Research Laboratory
  2. Korean Ministry of Education, Science, and Technology
  3. Defense Advanced Research Projects Agency (DARPA)
  4. Air Force Office of Scientific Research (AFOSR)
  5. National Research Foundation of Korea [2007-0055761, 2008-0062153] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Resistive memory devices based on organic materials that can be configured to two or more stable resistance states have been extensively explored as information storage media due to their advantages, which include simple device structures, low fabrication costs, and flexibility. Various organic-based materials such as small molecules, polymers, and composite materials have been observed to show bistability. This review provides a general summary about the materials, structures, characteristics, and mechanisms of organic resistive memory devices. Several critical strategies for device fabrication, performance enhancement, and integrated circuit architectures are also discussed.

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