Journal
MRS BULLETIN
Volume 36, Issue 6, Pages 439-445Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2011.111
Keywords
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Funding
- National Science Foundation [CBET 0754227, CHE-DMR-DMS 0934480]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [934480] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [0754227] Funding Source: National Science Foundation
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We describe two ways in which pulsed lasers can be used to increase efficiency in photovoltaic devices. First, pulsed-laser hyperdoping can introduce dopants into a semiconductor at non-equilibrium concentrations, which creates an intermediate band in the bandgap of the material and modifies the absorption coefficient. Second, pulsed-laser irradiation can enhance geometric light trapping by increasing surface roughness. Hyperdoping in silicon enables absorption of photons to wavelengths of at least 2.5 mu m, while texturing enhances the absorptance to near unity at all absorbing wavelengths. This article reviews both effects and comments on outstanding questions and challenges in applying each to increasing the efficiency of photovoltaic devices.
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