Journal
SEMICONDUCTORS
Volume 49, Issue 4, Pages 448-451Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782615040247
Keywords
-
Categories
Funding
- Science Development Foundation of the Republic of Azerbaijan [EIF-BGM-2-BRFTF-1-2012/2013-07/02/1]
Ask authors/readers for more resources
The photoluminescence of Ga2S3 crystals activated with Eu2+ and Tb3+ ions separately and with ions of both types is studied in the temperature range 77-300 K. It is established that, in the range 77-300 K, the observed broadband photoluminescence in (Ga2S3)(0.95):(Eu2O3)(0.05) crystals with a peak at 545 nm is defined by 4f (6)5d-4f (7)((8) S (7/2)) intracenter transitions in Eu2+ ions and the photoluminescence with peaks at 492, 544, 584, 625, and 680 nm in (Ga2S3)(0.99)(Tb2O3)(0.01) crystals is due to the 5d -> (2) F (j) (j = 6-2) intracenter transitions in Tb3+ ions. It is shown that the photoluminescence bands of Tb3+ ions in the (Ga2S3)(0.94)(Eu2O3)(0.05)(Tb2O3)(0.01) crystals disappears because of excitation energy transfer from Tb3+ ions to Eu2+ ions; i.e., the Tb3+ ion is a sensitizer of the photoluminescence of the Eu2+ ion.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available