Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/30/10/105037
Keywords
breakdown voltage; carbon doping location; AlGaN/GaN on Si; leakage current; HFET
Categories
Funding
- Nature Science Foundation of China [51177175, 61274039]
- National Basic Research Program of China [2011CB301903]
- International Sci. and Tech. Collaboration Program of China [2012DFG52260]
- International Sci. and Tech. Collaboration Program of Guangdong Province, China [2013B051000041]
- National High-tech R&D Program of China [2014AA032606]
- science and technology plan of Guangdong province [2013B010401013]
- Opened Fund of the State Key Laboratory on Integrated Optoelectronics [IOSKL2014KF17]
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The influence of different C-doping locations in a GaN/Si structure with a GaN/AlN superlattice (SL) buffer on the material and electrical properties of GaN/Si was studied. The introduction of C doping can remarkably degrade the crystal quality of the buffer. C-doping of a top GaN buffer can introduce compressive stress into the top GaN due to the size effect, while C-doping in a SL buffer can impair the compressive stress provided from the SL buffer to the top GaN. It is found that introducing high-density carbon into the whole buffer can result in a more strain-balanced GaN/Si system with small deterioration of the 2DEG channel. Furthermore, the whole buffer C-doping method is an effective and easy way to achieve a thin buffer with low leakage current and high breakdown voltage (266 V@ 1 nA mm(-1); 698 V@ 10 mu A mm(-1); 912 V@ 1 mA mm(-1)). By using the whole-buffer C-doping method, a 2.5 mu m-thick AlGaN/GaN HFET with a breakdown voltage higher than 900 V was achieved, and the breakdown voltage per unit buffer thickness can reach 181 V mu m(-1).
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