Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/30/8/085018
Keywords
II-VI semiconductors; band gap; highly mismatched alloy; intermediate band gap
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Funding
- National Science Centre ETIUDA [2013/08/T/ST3/00400]
- National Science Centre HARMONIA [2013/10/M/ST3/00638]
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the US Department of Energy [DE-AC02-05CH11231]
- Grants-in-Aid for Scientific Research [15H04253] Funding Source: KAKEN
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The effect of a semiconductor matrix on the band anticrossing interaction is studied for four different dilute-oxide material systems: ZnSO, ZnSeO, ZnTeO, and ZnCdTeO. The choice of host material allows for independent control of the energy separation between the conduction band edge and the O energy level as well as the coupling parameter. The transition energies measured by photoreflectance and optical absorption are well explained by the band anticrossing model with the coupling parameter increasing from 1.35 eV for ZnSO to 2.8 eV for ZnTeO and showing approximately linear dependence on the electronegativity difference between O and the host anion.
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