Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/30/8/085004
Keywords
p-type SnO TFT; subgap density of states; temperature-dependent field-effect characteristics; Meyer-Neldel rule
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Funding
- National Research Foundation of Korea(NRF) - Korea government (MSIP) [2014-005368]
- National Research Foundation of Korea [2014R1A2A2A05005368] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper experimentally investigates the subgap density of states (DOS) in p-type tin monoxide (SnO) thin-film transistors (TFTs) for the first time by using temperature-dependent field-effect measurements. As the temperature increases, the turn-on voltage moves in the positive direction, and the off-current and subthreshold slope continuously increase. We found that the conductivity of the SnO TFT obeys the Meyer-Neldel (MN) rule with a characteristic MN parameter of 28.6 eV(-1) in the subthreshold region, from which we successfully extracted the subgap DOS by combing the field-effect method and the MN relation. The extracted subgap DOS from fabricated p-type SnO TFTs are exponentially distributed in energy, and exhibit around two orders of magnitude higher values compared to those of the n-type amorphous indium-gallium-zinc oxide TFTs.
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