Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/30/10/105008
Keywords
Si-Ge interdiffusion; high phosphorus doping; Fermi effect; Ge-on-Si laser; phosphorus segregation
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Funding
- Natural Science and Engineering Research Council of Canada (NSERC)
- Singapore National Research Foundation [NRF-CRP 12-2013-04]
- Crosslight Software Inc
- Chuang Seng Tan is affiliated with Centre for Micro-/Nano-electronics (NOVITAS)
- Silicon Technologies
- Centre of Excellence at Nanyang Technological University
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Si-Ge interdiffusion with different P doping configurations was investigated. Significant interdiffusion happened when the Ge layers were doped with P in high 10(18) cm(-3) range, which resulted in a SiGe alloy region thicker than 150 nm after defect annealing cycles. With high P doped Ge, Si-Ge interdiffusivity is enhanced by 10-20 times in the x(Ge) >0.7 region compared with the control sample without P doping. We attribute this phenomenon to the much faster P transport towards the Ge seeding layers from the Ge side during the Ge layer growth, which increases the negatively charged vacancy concentrations and thus the interdiffusivity due to the Fermi effect in Si-Ge interdiffusion. This work is relevant to Ge-on-Si type device design, especially Ge-on-Si lasers.
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