Journal
SCRIPTA MATERIALIA
Volume 99, Issue -, Pages 53-56Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2014.11.025
Keywords
Silicon carbide; MAX phase; Physical vapor deposition; High temperature
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Funding
- VINN Excellence Center in research and innovation on Functional Nanoscale Materials (FunMat) by the Swedish Governmental Agency for Innovation Systems
- Swedish Foundation for Strategic Research
- Synergy Grant FUNCASE, Functional Carbides and Advanced Surface Engineering
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We report a single-step procedure for growth of ohmic Ti3SiC2 on 4H-SiC by sputter-deposition of Ti at 960 degrees C, based on the Ti-SiC solid-state reaction during deposition. X-ray diffraction and electron microscopy show the growth of interfacial Ti3SiC2. The as-deposited contacts are ohmic, in contrast to multistep processes with deposition followed by rapid thermal annealing. This procedure also offers the possibility of direct synthesis of oxygen-barrier capping layers before exposure to air, potentially improving contact stability in high-temperature and high-power devices. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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