Synthesis and Characterization of Fluoro-co-Phenyl Silsesquioxane (FCPSQ) for Low Dielectric Constant Materials

A new type of low-k dielectric material, poly(tridecafluoro1,1,2,2, tetrahydrooctyl-co-phenylsilsesquioxane) (PFCPSQ) was synthesized by hydrolysis and condensation reaction of trimethoxysilyl monomers in the presence of a base catalyst in H2O/THF mixture solvent at 25 degrees C. Chemical compositions, molecular weight, and structure of the obtained PFCPSQs were characterized using H-1 NMR, Si-29 NMR, FT-IR, and GPC. Dielectric values were examined by a HP-4190 system and a dielectric constant k of 1.92 was obtained.