Journal
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
Volume 58, Issue 10, Pages -Publisher
SCIENCE PRESS
DOI: 10.1007/s11433-015-5717-0
Keywords
nitrogen-doped graphene; chemical vapor deposition; Raman spectroscopy; X-ray photoemission spectroscopy
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Funding
- National Natural Science Foundation of China [91123009, 10975115]
- Natural Science Foundation of Fujian Province of China [2012J06002]
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This work provides an effective low-cost synthesis and in-depth mechanistic study of high quality large-area nitrogen-doped graphene (NG) films. These films were synthesized using urea as nitrogen source and methane as carbon source, and were characterized by scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The N doping level was determined to be 3.72 at.%, and N atoms were suggested to mainly incorporated in a pyrrolic N configuration. All distinct Raman peaks display a shift due to the nitrogen-doping and compressive strain. The increase in urea concentration broadens the D and 2D peak's Full Width at Half Maximum (FWHM), due to the decrease of mean free path of phonons. The N-doped graphene exhibited an n-type doping behavior with a considerably high carrier mobility of about 74.1 cm(2)/(V s), confirmed by electrical transport measurements.
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