Journal
SCIENCE
Volume 349, Issue 6247, Pages 524-528Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aab4097
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Funding
- King Abdullah University of Science and Technology (Saudi Arabia), Ministry of Science and Technology (MOST)
- Taiwan Consortium of Emergent Crystalline Materials (TCECM)
- Academia Sinica (Taiwan)
- Japan Science and Technology Agency research acceleration program
- TCECM
- MOST of Taiwan [NSC102-2119-M-009-002-MY3]
- Center for Interdisciplinary Science of Nation Chiao Tung University
- [AOARD-134137]
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Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.
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