Effect of He+ ion implantation on Rb+-K+ exchanged KTiOPO4 optical waveguide

We report on the effect of 500 keV He+ ion implantation with a fluence of 3 x 10(16) ions/cm(2) on Rb+-K+ ion exchanged KTiOPO4 optical waveguide. The refractive index distribution after ion implantation, ion exchange, and ion implantation and subsequent ion exchange were reconstructed by reflectivity calculation method, inverse Wentzel-Kramers-Brillouin, and intensity calculation method, respectively. The near field intensity distribution of the waveguides was simulated by Beam Propagation Method. The phase analysis of the samples was measured by X-ray diffraction technique. The damage layer formed in the depth of maximum nuclear energy deposition by ion implantation acts as a barrier to block the ions diffusion into the sample. Results exhibit that ion implantation and subsequent ion exchange are effective means for optical waveguide formation.