Journal
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume 55, Issue 4, Pages 782-786Publisher
WILEY
DOI: 10.1002/mop.27425
Keywords
BiCMOS integrated circuits; millimeter wave (mm-wave) circuits; mixers; power amplifier transformers
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This article presents a 24/77-GHz transmitter chipset for automotive radar sensors implemented in a 160/175-GHz fT/fmax SiGe BiCMOS technology. The chipset adopts a dual-band architecture consisting of a 24-GHz section for ultra-wideband short-range radar operation, which is also exploited to drive the 77-GHz long-range radar transmitter front-end. The proposed design adopts a single 24-GHz frequency synthesizer to implement both radar operation modes. The transmitter chipset is able to deliver a maximum output power of 3 dBm and 12 dBm at 24 GHz and 77 GHz, respectively. The 24-GHz transmitter demonstrates to operate with pulse widths of 0.5 ns and 1 ns in compliance with the transmission mask designed by ETSI. The 77-GHz transmitter exhibits a power gain of 20 dB, an output power of 12 dBm, and an output referred 1-dB compression point of 9.5 dBm, while drawing 155 mA from a 2.5-V supply voltage. (c) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:782786, 2013; View this article online at wileyonlinelibrary.com. DOI: 10.1002/mop.27425
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