Journal
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
Volume 20, Issue 6, Pages 1181-1185Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00542-013-1910-0
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- National Science Council of Taiwan [NSC 99-2221-E-492-023, NSC 100-2628-E-151-003-MY3]
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The effects of indium tin oxide (ITO) film annealing temperature on the performance of organic solar cells are investigated. The roughness of the ITO film surface morphology increased with increasing annealing temperature. The optical penetration and rate of exciton generation both increased with increasing ITO film annealing temperature, enhancing the short-circuit current density. The maximum efficiency (2.62 %) was obtained with an annealing temperature of about 500 A degrees C. The incident-photon-to-current efficiency value for a hybrid photovoltaic device with an ITO film annealed temperature at 500 A degrees C was 45 % at 475 nm.
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