Journal
MICROSCOPY AND MICROANALYSIS
Volume 17, Issue 1, Pages 15-25Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S1431927610093888
Keywords
atom probe; dielectric materials; field evaporation; numeric simulation; dielectric layers; oxide precipitates
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Funding
- Deutsche Forschungsgemeinschaft
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As a major improvement in three-dimensional (3D) atom probe, the range of applicable material classes has recently been broadened by the establishment of laser-assisted atom probes (LA-3DAP). Meanwhile, measurements of materials of low conductivity, such as dielectrics, ceramics, and semiconductors, have widely been demonstrated. However, besides different evaporation probabilities, heterogeneous dielectric properties are expected to give rise to additional artifacts in the 3D volume reconstruction on which the method is based. In this article, these conceivable artifacts are discussed based on a numeric simulation of the field evaporation. Sample tips of layer- or precipitate-type geometry are considered. It is demonstrated that dielectric materials tend to behave similarly to metals of reduced critical evaporation field.
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