Journal
MICROELECTRONICS RELIABILITY
Volume 54, Issue 12, Pages 2747-2753Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2014.07.006
Keywords
ALD; Al2O3; MIM capacitor; Memristor; Resistive switching; BEOL
Funding
- National Council of Science and Technology (CONACyT-Mexico)
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Resistive-switching devices based on Metal Insulator Metal (MIM) structures have shown promising memory performance characteristics while enabling higher density of integration. Usually, these MIM devices are fabricated using different processing conditions including high temperature thermal treatments that could lead to undesirable chemical reactions in the insulator material and at its interface with the metals involved. In this work, we compare the electrical characteristics of MIM devices (fabricated on glass at 300 degrees C) that use aluminum or tungsten as bottom electrode (BE) in order to study the influence of a highly reactive (aluminum) or inert (tungsten) metal electrode on the memory characteristics. We found that the switching characteristics of Al2O3 (from a high-resistance state HRS to a low-resistance state LRS and vice versa), are highly dependent on the surface roughness of the BE, the thickness of Al2O3 and the current compliance (CC) which limits the electron density flowing through both top/bottom electrodes. (C) 2014 Elsevier Ltd. All rights reserved.
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