Temperature dependent electrical and dielectric properties of Sn/p-Si metal-semiconductor (MS) structures

In this study, we investigated temperature dependent electrical and dielectric properties of the Sn/p-Si metal-semiconductor (MS) structures using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics in the temperature range 80-400 K. The dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and ac electrical conductivity (sigma(ac)) were calculated from the C-V and G/omega-V measurements and plotted as a function of temperature. The values of the epsilon', epsilon '', tan delta and sigma(ac) at low temperature (=80 K) were found to be 0.57, 0.37, 0.56 and 1.04 x 10(-7), where as the values of the epsilon', epsilon '', tan delta and sigma(ac) at high temperature (=400 K) were found to be 0.75, 0.44, 0.59 and 1.21 x 10(-6), respectively. An increase in the values of the epsilon', epsilon '', tan delta and sigma(ac) where observed with increase in temperature. Furthermore, the effects of interface state density (N(SS)) and series resistance (R(S)) on C-V characteristics were investigated in the wide temperature range. (C) 2011 Elsevier Ltd. All rights reserved.