Journal
MICROELECTRONICS RELIABILITY
Volume 51, Issue 2, Pages 370-375Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2010.08.022
Keywords
-
Funding
- European Union
- Turkish Academy of Sciences
- TUBITAK [105A005, 106E198, 107A004]
Ask authors/readers for more resources
The forward and reverse bias I-V. C-V, and G/omega-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al0.22Ga0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiNx insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiNx) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (Phi(B0)), series resistance (R-s), interface-state density (N-ss). The energy density distribution profiles of the N-ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height (Phi(e)) and ideality factor (n(v)) of devices. In addition, the N-ss a function of E-c-E-ss was determined from the low-high frequency capacitance methods. It was found that the values of N-ss and R-s in SBD HEMTs decreases with increasing insulator layer thickness. (C) 2010 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available