Journal
MICROELECTRONICS RELIABILITY
Volume 50, Issue 6, Pages 767-773Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2010.02.015
Keywords
GaN; HEMT; Critical voltage; Degradation; Reliability; Modeling
Ask authors/readers for more resources
It has recently been postulated that GaN high electron mobility transistors under high voltage stress degrade as a result of defect formation induced by excessive mechanical stress that is introduced through the inverse piezoelectric effect. This mechanism is characterized by a critical voltage beyond which irreversible degradation takes place. In order to improve the electrical reliability of GaN HEMTs, It is important to understand and model this degradation process. In this paper, we formulate a first-order model for mechanical stress and elastic energy induced by the inverse piezoelectric effect in GaN HEMTs which allows the computation of the critical voltage for degradation in these devices. (C) 2010 Elsevier Ltd All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available