Journal
MICROELECTRONICS JOURNAL
Volume 39, Issue 12, Pages 1425-1428Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2008.06.085
Keywords
Thin films; Al-doped ZnO; Sol-gel; Spin coating
Funding
- Spanish Government through MEC [MAT2006-02279]
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Thin films of intrinsic and Al-doped ZnO were prepared by the sol-gel technique associated with spin coating onto glass substrates. Zinc acetate dehydrate, ethanol and monoethanolamine were used as a starting material, solvent and stabiliser, respectively. Structural, electrical and optical characterizations of the films have been carried out. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction <0 0 2>. The four-points technique was used to characterize thin films electrically. All films exhibit a transmittance above 80-90% along the visible range up to 650nm and a sharp absorption onset about 375nm corresponding to the fundamental absorption edge 3.3eV. Intense UV photoluminescence is observed for undoped and 1% Al-doped ZnO films. (C) 2008 Elsevier Ltd. All rights reserved.
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