Journal
MICROELECTRONIC ENGINEERING
Volume 121, Issue -, Pages 104-107Publisher
ELSEVIER
DOI: 10.1016/j.mee.2014.03.025
Keywords
Electron beam lithography; Direct-writing; Single-shot writing; Nanofabrication
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Funding
- European Commission [NMP2-SE-2012-314345]
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Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm(2) for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field. (C) 2014 Elsevier B.V. All rights reserved.
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