Journal
MICROELECTRONIC ENGINEERING
Volume 128, Issue -, Pages 59-65Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2014.05.027
Keywords
Electron-beam lithography; Hydrogen silsesquioxane (HSQ); Adhesion; Chemical modification
Categories
Funding
- National Natural Science Foundation of China [11034007, 11274107, 61204109, 61102023]
- National Key Scientific Instrument and Equipment Development Project of China [ZDYZ2013-1]
- National High Technology Research and Development Program of China (863 Program) [2012AA040503]
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Hydrogen silsesquioxane (HSQ) is an excellent negative-tone resist for electron-beam lithography and sub-5-nm-half-pitch patterns can be achieved using high contrast development processes. However, the quality of HSQ adhesion on different types of substrates varies, thus limiting the function of HSQ in etching masks or metal lift-off process on various substrates. In this study, we proposed several chemical modification methods to improve HSQ adhesion resist onto Si, Cr, Cu, Mo, Au, and indium-tin oxide (ITO) substrates. HSQ adhesion patterns onto Au substrates was significantly improved by utilizing (3-mercaptopropyl) trimethoxysilane (MPTMS) and Poly (diallyldimethylammonium) chloride (PDDA) modifications. The (3-Aminopropyl) triethoxysilane (APTES) enhances the HSQ adhesion on Mo substrates. APTES and PDDA improve HSQ adhesion on Si, Cr, Cu and ITO. The improved adhesive HSQ nanopatterns on these substrates may benefit the fabrication of various nanophotonic and nanoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.
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