Journal
MICROELECTRONIC ENGINEERING
Volume 101, Issue -, Pages 23-30Publisher
ELSEVIER
DOI: 10.1016/j.mee.2012.08.016
Keywords
Laser-assisted die transfer; Ultrathin bare die; Advanced packaging of bare dice
Categories
Funding
- Defense Microelectronics Activity (DMEA) [H94003-08-2-0805, H94003-09-2-0905, H94003-11-2-1102]
Ask authors/readers for more resources
Laser-assisted assembly of ultrathin, ultrasmall bare dice holds promise for enabling a new class of very low cost flexible electronic devices with applications in many areas. But this advanced packaging technology will be of little use if two important parameters are not considered - transfer rate and precision/accuracy of die placement. Both parameters depend on the laser process parameters and the properties of the consumable materials used. Reported are results from a process study designed to investigate the effects of the laser pulse parameters, the adhesive layer properties, and the method of wafer dicing on the transfer rate and placement precision/accuracy when transferring ultrathin (50-mu m thick) silicon dice using the thermo-mechanical selective laser-assisted die transfer (tmSLADT) technique developed by this team and reported in prior publications. It is shown that, when properly controlled, tmSLADT can transfer ultrathin bare dice with precision and accuracy compatible with those achievable by the conventional die placement methods but at a much higher transfer rate. (C) 2012 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available