Journal
MICROELECTRONIC ENGINEERING
Volume 106, Issue -, Pages 164-167Publisher
ELSEVIER
DOI: 10.1016/j.mee.2013.01.009
Keywords
Through Si via; Diffusion barrier layer; Seed layer; Electroless plating; Pd nano particles
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Funding
- Grants-in-Aid for Scientific Research [10J04517] Funding Source: KAKEN
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A conformal diffusion barrier was formed in a high aspect ratio through-silicon via using electroless plating. Dense adsorption of Pd nanoparticle catalyst on SiO2 assisted the formation of a thin electroless Co-W-B layer, upon which an electroless Cu seed layer could be deposited. The adhesion strength of the Co-W-B film was enhanced by reducing the film thickness, and the maximum strength was obtained at a thickness of 20 nm. The Co-W-B layer exhibited good barrier properties against Cu diffusion to SiO2 after annealing at 300 degrees C, although slight diffusion of the Pd atoms in Cu was observed. (C) 2013 Elsevier B.V. All rights reserved.
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