Journal
MICROELECTRONIC ENGINEERING
Volume 93, Issue -, Pages 81-84Publisher
ELSEVIER
DOI: 10.1016/j.mee.2011.12.006
Keywords
Resistive memory (RRAM); Cross-point array; Cell selector; Readout margin; Power consumption
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Funding
- Ministry of Knowledge Economy
- National Research Foundation of Korea (NRF)
- Korea government (MEST)
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A resistive memory can be highly integrated using a cross-point architecture; however, it requires appropriate cell selectors in order to suppress sneak paths and reduce power dissipation. In this paper, we study the effect of cell selectors on the readout margin and power dissipation in the read operation. A cell selector (Pt/TiOx/Pt) and a resistive memory (Mo/SiOx/Pt) were fabricated, and the electrical I-V characteristics were examined after connecting these two devices in series. On the basis of the I-V measurements, the readout margin and power dissipation of a cross-point array were calculated depending on the existence and characteristics of the selector. (C) 2012 Elsevier B.V. All rights reserved.
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