Journal
MICROELECTRONIC ENGINEERING
Volume 88, Issue 5, Pages 705-708Publisher
ELSEVIER
DOI: 10.1016/j.mee.2010.06.040
Keywords
Through Silicon Via (TSV); Electrochemical deposition (ECD); Copper; Periodic Pulse Reverse (PPR) plating
Ask authors/readers for more resources
In this contribution we show experimental investigations regarding Periodic Pulse Reverse (PPR) plating for the filling of Through Silicon Vias that are aimed for the use in 3D integration applications. The purpose of this method is to prevent the use of plating additives that induce high process complexity in terms of process control and high process costs due to the high consumption of those additives. We therefore compare the effect of PPR plating without additives to that effect of PPR plating with additives. In first results with non-optimized PPR plating we already show the large gain in step coverage during TSV filling compared to standard DC plating. (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available