4.7 Article

Impact of the substrate on the efficiency of thin film thermoelectric technology

Journal

APPLIED THERMAL ENGINEERING
Volume 84, Issue -, Pages 206-210

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.applthermaleng.2015.03.062

Keywords

Thin film thermoelectrics; Thermoelectric figure of merit; Harman method

Funding

  1. CONACYT, the Mexican Council for Science and Technology through Grant for fundamental research [241597]

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Thermoelectricity is one of the simplest technologies for thermal energy conversion. Moreover, because of their relatively low efficiency, bulk thermoelectric materials are generally used in environments where their solid state nature outweighs their poor efficiency. Nevertheless, low dimensional thermoelectric materials shed a light in order to achieve higher thermoelectric performance than their bulk counterparts via quantum and spatial confinement of energy carriers. The Thermoelectric figure of merit ZT is the basic criterion for estimating the performance of thermoelectric materials. In this work, by way of an extension of the Harman method to thin films onto substrate to evaluate ZT it is shown that the solely presence of a substrate affects significantly the intrinsic value of the ZT independently of the electrical and thermal nature of the substrate. Furthermore, the model unveils that as the thickness ratio between substrate and thin film increases, the parameter ZT sharply tends to zero; this effect opens a serious problem to overcome by the thin film thermoelectric technology, especially at nanoscale. In this sense, challenges in order to engineering planar thermoelectric devices at micro/nanoscale are properly identified. (C) 2015 Elsevier Ltd. All rights reserved.

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