Resistive switching characteristics of ultra-thin TiOx

We investigated the resistive switching characteristics of Ir/TiOx/TiN structure with 50 nm active area. We successfully formed ultra-thin (4 nm) TiOx active layer using oxidation process of TiN BE, which was confirmed by X-ray Photoelectron Spectroscopy (XPS) depth profiling. Compared to large area device (50 mu m), which shows only ohmic behavior, 250 and 50 nm devices show very stable resistive switching characteristics. Due to the formation and rupture of oxygen vacancies induced conductive filament at Ir and TiOx interface. bipolar resistive switching was occurred. We obtained excellent switching endurance up to 10(6) times with 100 ns pulse and negligible degradation of each resistance state at 85 degrees C up to 10(4) s. (c) 2011 Elsevier B.V. All rights reserved.