Active NEMS combining a single crystal silicon mechanical structure and an embedded MOSFET transistor for sensing and RF applications

The paper reports on an integrated device combining a single-crystal silicon NEMS with an embedded MOS transistor in transconductance configuration fabricated with a simple and low cost technology based on localized Silicon on Nothing technology. Thanks to the high transconductance achievable, this approach enables NEMS with embedded MOS transistors for enhanced readout efficiency. (C) 2010 Elsevier B.V. All rights reserved.