Journal
MICROELECTRONIC ENGINEERING
Volume 87, Issue 12, Pages 2638-2641Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2010.07.039
Keywords
GaN; High electron mobility transistors; Post-process rapid thermal annealing; Current dispersion/collapse
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Funding
- Chinese Academy of Sciences
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The effects of post-process rapid thermal annealing (RTA) treatment after device fabrication on direct current, microwave and power performances of AlGaN/GaN high electron mobility transistors (HEMTs) with a gate-length of 0.2 mu m were fully investigated. By 3 min post-process RTA treatment at 350 C under N(2) atmosphere, the direct current (DC), radio frequency (RF) small signal and power performances of AlGaN/GaN HEMTs have been much improved. The output power, power gain and power added efficiency (PAE) of GaN HEMT device with gate wide of 1 mm increase from 37.09 dBm, 6.09 dB and 42.79% to 38.22 dBm, 7.22 dB and 67.3%. The post-process RTA after device fabrication has two merits. On the one hand, it improves passivation effect of SiN(x) dielectric layer on AlGaN/GaN HEMT surface, suppressing RF current dispersion. On the other hand, it helps recover dry-etch damage at the Schottky metal/AlGaN interface, leading to reduction of reverse Schottky leakage current. (C) 2010 Elsevier B.V. All rights reserved.
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