Journal
MICROELECTRONIC ENGINEERING
Volume 87, Issue 5-8, Pages 1270-1273Publisher
ELSEVIER
DOI: 10.1016/j.mee.2009.10.050
Keywords
Silicon nanowires; MEMS; NEMS; Nanomechanical cantilever sensors
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We present a fabrication process to obtain ultrasensitive piezoresistive strain gauges that exploit the exceptional mechanical and piezoresistive properties of silicon nanowires grown via the vapour-liquid-solid mechanism. The process allows the implementation of nanowire-based strain gauges in micro and nanoelectromechanical systems, which is demonstrated here for piezoresistive cantilever sensors. The main feature of this process is that it allows the location of a nanowire array only at one side of the neutral axis of the mechanically active area of the device. This is a crucial requirement to achieve that only tensile or compressive stresses occur in the array, so that a detectable change in resistance is produced. Atomic force microscopy characterization of the sensitivity of the obtained devices validates the fabrication process. (C) 2009 Elsevier B.V. All rights reserved.
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