Journal
MICROELECTRONIC ENGINEERING
Volume 87, Issue 5-8, Pages 1531-1533Publisher
ELSEVIER
DOI: 10.1016/j.mee.2009.11.034
Keywords
Resistive switching; Methyl-silsesquioxane; MSQ; Nano imprint lithography; NIL; Memory devices
Ask authors/readers for more resources
Resistive switching materials attract high scientific interest as a candidate for potential next-generation non-volatile memories. Nano crossbar structures and single junctions down to 60 x 60 nm(2) with integrated silver doped methyl-silsesquioxane (MSQ) as switching material are fabricated using UV nano imprint. Here silver doped MSQ with platinum top and bottom electrodes replaces the formerly used material stack with undoped MSQ between platinum bottom and silver top electrodes. The new material system yields advantages regarding the process temperature budget and therefore multiple crossbar arrays and electrode layers are possible in order to multiply the integration density by the number of crossbar layers. (C) 2009 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available