Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

High-k dielectrics are promising candidates to increase capacitor integration densities but their properties depend on manufacturing process and frequency because relaxation and resonance mechanisms occur. Complementary characterization protocols are needed to analyze high-k insulator behaviour from DC to microwave frequencies. The extraction of Plasma Enhanced Atomic Layer Deposition HfO2 and ZrO2 complex permittivity was performed up to 5 GHz using dedicated test vehicles allowing an in situ characterization as a function of dielectric thickness. The measurement procedure was thus validated, highlighting the potentiality of these two dielectrics to cover a wide range of frequencies. (C) 2009 Elsevier B.V. All rights reserved.