Journal
MICROELECTRONIC ENGINEERING
Volume 87, Issue 12, Pages 2525-2530Publisher
ELSEVIER
DOI: 10.1016/j.mee.2010.06.004
Keywords
Schottky barrier height; Orcein; Organic materials; Ideality factor; Capacitance measurements
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An Au/Orcein/p-Si/Al device was fabricated and the current-voltage measurements of the devices showed diode characteristics. Then the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device were investigated at room temperature. Some junction parameters of the device such as ideality factor, barrier height, and series resistance were determined from I-V and C-V characteristics. The ideality factor of 2.48 and barrier height of 0.70 eV were calculated using I-V characteristics. It has been seen that the Orcein layer increases the effective barrier height of the structure since this layer creates the physical barrier between the Au and the p-Si. The interface state density N-ss were determined from the I-V plots. The capacitance measurements were determined as a function of voltage and frequency. It was seen that the values of capacitance have modified with bias and frequency. (C) 2010 Elsevier B.V. All rights reserved.
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