Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1842-1844Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.03.019
Keywords
High-k dielectrics; Defects
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We investigate a group of Hf- and Zr-based dielectrics crystallizing in the cubic perovskite structure for memory applications. The dielectrics are deposited in the form of thin layers (<30 nm) onto TiN substrates using molecular beam deposition. Prepared layers are characterized with respect to their dielectric constant, crystallization temperature as well as some aspects of leakage current flowing across group-II hafnates and zirconates. We show that dielectric constants of about 40 can be achieved for BaHfO(3), BaZrO(3) and SrHfO(3) on TiN substrates. On an example of BaHf(1-x)Ti(x)O(3), we demonstrate that a significant gain in the dielectric constant and capacitance density can be achieved by partial substitution of Hf atoms by Ti in BaHfO(3). This process leads also to a reduction of the crystallization temperature of the layers. (C) 2009 Elsevier B.V. All rights reserved.
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