Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1668-1671Publisher
ELSEVIER
DOI: 10.1016/j.mee.2009.03.011
Keywords
Aluminium oxide; Defects; Electronic structure calculations; High dielectric constant
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We have calculated the oxygen vacancy levels in Al2O3 using first principles methods. They are found to lie just below midgap in the oxide, equivalent to below the Si valence band edge when aligned to the silicon band structure. This low energy accounts for the behaviour of Al2O3 in oxide capping layers and as an insulator in future Flash memory. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
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