Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 11, Pages 2228-2231Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.03.078
Keywords
ZnO nano-pattern; ZnO-sol; ZnO-gel; Nanoimprint lithography
Categories
Funding
- Ministry of Health and Welfare [A050750]
- Ministry of Education, Science and Technology [2008-04501]
- National Research Foundation of Korea [과C6A2001, 2007-2000493, 2008-04501, 2008-2004501] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 degrees C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm. were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM). (C) 2009 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available