Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1942-1945Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.03.085
Keywords
Phase-change memory (PCM); Structural relaxation; Crystallization; Meyer-Neldel rule; Many-body thermal excitation
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Data retention in phase-change memory (PCM) devices is the result of two physical phenomena: structural relaxation (SR) and crystallization of the amorphous chalcogenide material. Although the two processes are rather different, we show in this paper that a common physical interpretation for SR and crystallization kinetics is possible. Activation energies and Arrhenius pre-factors for SR and crystallization are found to coherently obey a Meyer-Neldel rule and are explained by many-body thermal excitation of weakly-bonded and normally-bonded clusters, respectively. (C) 2009 Elsevier B.V. All rights reserved.
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