Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1707-1710Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.03.124
Keywords
Oxide charge; PECVD silicon oxide; Plasma oxidation
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SiO2 gate dielectric layers (4-60 nm) were grown (0.6 nm/min) by plasma-enhanced chemical vapor deposition (PECVD) in strongly diluted silane plasmas at low substrate temperatures. In contrast to the well-accepted positive charge for thermally grown silicon dioxide, the net oxide charge was negative and a function of layer thickness. Our experiments suggested that the negative charge was created due to unavoidable oxidation of the silicon surface by plasma species, and the CVD component added a positive space charge to the deposited oxide. The net charge was negative under process conditions where plasma oxidation played a major role. Such conditions include low deposition rates and the growth of relatively thin layers. (C) 2009 Elsevier B.V. All rights reserved.
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