Journal
MICROELECTRONIC ENGINEERING
Volume 85, Issue 5-6, Pages 1039-1042Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2008.01.093
Keywords
RF MEMS switch; semi-suspended CPW; high-resistivity silicon (HRS); microwave losses; surface-passivation HRS; titanium oxide (TiO2)
Ask authors/readers for more resources
A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of TiO2, a down/up capacitive ratio close to 200 is achieved with 8 V pull-in. It is also demonstrated that, using a passivated-surface HRS and semi-suspended conductors on air, the microwave losses in the CPW line are as low as 0.1 dB/mm at 20 GHz. The reported RF MEMS shunt capacitor is expected to serve as core device for phase shifting applications in the 10-20 GHz range, both for switching operations and as a variable capacitor in distributed MEMS transmission lines (DMTLs). (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available