Journal
MICROELECTRONIC ENGINEERING
Volume 85, Issue 12, Pages 2338-2341Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2008.09.014
Keywords
MOCVD; Chalcogenide films; Ge-Sb-Te; Phase-change memories
Ask authors/readers for more resources
Films of chalcogenide Ge-Sb-Te materials were grown by pulsed liquid injection chemical vapor deposition (CVD) technique. Simple thermal CVD without additional process activation and CVD with remote activation of precursor decomposition process by a hot-wire were investigated and compared. Ge(NMe(2))(4), Sb(NMe(2))(3) and Te(i-Pr)(2) precursors in a form of diluted solutions in toluene were used for depositions. Film composition was controlled by injection parameters, while the thickness was directly related with number of pulses. Hot-wire activated CVD process allows the growth of chalcogenide films of clearly better quality compared to films grown by standard thermal CVD. Uniform, smooth, crystalline Ge(2)Sb(2)Te(5) films were grown at substrate/wire temperature 300 degrees C/550 degrees C and pressure <= 15 Torr, using nitrogen as a carrier gas, on Si, Si/SiO(2), Si/Si(3)N(4) and glass substrates. Forty to forty five nanometer thick films on Si/SiO(2) substrates showed reversible electrical and optical phase switching behavior. (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available