Journal
MICRO & NANO LETTERS
Volume 6, Issue 6, Pages 459-462Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/mnl.2011.0219
Keywords
-
Funding
- Nation High Technology Research and Development Program of China [2007AA03Z301]
- Natural Science Foundation of China [20771032, 61076040]
- Anhui Province [070414200]
- Henan Province Scientific and Technological Department Key Programs for Science and Technology Development [092102210198]
- National Basic Research Program of China [2007CB936001]
Ask authors/readers for more resources
The atmosphere compensating technique with an individual selenium source is, first, used in the growth of phosphorus-doped p-type ZnSe nanowires. The morphology and structure characterisations reveal that the as-synthesised ZnSe nanowires have a wurtzite structure with a diameter of about 160 nm, a growth direction of [001]. The electrical properties' characterisations demonstrate that the selenium atmosphere compensation technique assisted with phosphorus-doping leads to a substantial action in p-type conductivity of ZnSe nanowires with a high mobility of 1.25 cm(2) V-1 S-1 and carrier concentration of 1.47 x 10(18) cm(-3). The photoluminescence measurements show a dominant emission and two donor-acceptor pair emission.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available