Journal
APPLIED SURFACE SCIENCE
Volume 356, Issue -, Pages 732-736Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2015.08.144
Keywords
a-Si:H; Optical materials and properties; Photovoltage; Photodetector
Categories
Funding
- National Natural Science Foundation of China [51372064]
- Nature Science Foundation for Distinguished Young Scholars of Hebei Province [A2013201249]
- One Hundred Talent Project of Hebei Province [E2013100013]
Ask authors/readers for more resources
In this paper, we reported a new finding of lateral photovoltaic effect (LPE) in amorphous Si thin films based on a-Si:H(p)/a-Si:H(i)/c-Si(n) structure. We find that the position sensitivity for this structure increases with both power and wavelength under constant contact distance, and the laser wavelength can be extended from visible to infrared region. Moreover, we studied the dependence of the position sensitivity on the laser power as well as contact distance by modulating these two parameters and gave a carefully theoretical analysis. This work may provide essential insights for a-Si:H/c-Si p-i-n heterostructure as a potential candidate for position sensitive detector (PSD) devices. (C) 2015 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available