Journal
APPLIED SURFACE SCIENCE
Volume 357, Issue -, Pages 666-671Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2015.09.049
Keywords
Quantum dot-sensitized solar cell; Indium sulfide; Successive ionic layer adsorption and reaction; Solvothermal method; Photoanode
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Funding
- National Natural Science Foundation of China [21503202, U1037604]
- Shandong Province Outstanding Youth Scientist Foundation Plan [BS2013CL015]
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Pursuit of an efficient strategy for quantum dot-sensitized photoanode has been a persistent objective for enhancing photovoltaic performances of quantum dot-sensitized solar cell (QDSC). We present here the fabrication of the indium sulfide (In2S3) quantum dot-sensitized titanium dioxide (TiO2) photoanode by combining successive ionic layer adsorption and reaction (SILAR) with solvothermal processes. The resultant QDSC consists of an In2S3 sensitized TiO2 photoanode, a liquid polysulfide electrolyte, and a Co0.85Se counter electrode. The optimized QDSC with photoanode prepared with the help of a SILAR method at 20 deposition cycles and solvothermal method yields a maximum power conversion efficiency of 1.39%. (C) 2015 Elsevier B.V. All rights reserved.
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