Journal
APPLIED SURFACE SCIENCE
Volume 324, Issue -, Pages 30-34Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2014.10.113
Keywords
4H-SiC; RIE; Hydrogen etching; DLTS
Categories
Funding
- II-VI Foundation block-gift program cooperative research initiative, U.S. Army Research Laboratory [W911NF-07-2-0046]
- NSF [DMR-1206793, DMR-1206655, DMR-1106070, DMR-1206256]
- Natural Sciences and Engineering Council of Canada
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1106070] Funding Source: National Science Foundation
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We report the use of hydrogen annealing to implement the substantial recovery of the a-face (1 1 (2) over bar 0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel. (C) 2014 Elsevier B.V. All rights reserved.
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